T660N Infineon Technologies, T660N Datasheet - Page 8

• Manufacturer Part Number: T660N
• Manufacturer: Infineon Technologies

Specifications of T660N

• Vdrm/ Vrrm (v): 2,200.0 - 2,600.0 V
• Itsm: 11,500.0 A
• Itavm: 659 (180 ° el sin)
• Housing: Disc dia 58mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2009-03-04, H.Sandmann
N
Phase Control Thyristor
100
10000
0,1
10
1000
100
1
10
Netz-Thyristor
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
a - 20W / 10ms
Parameter: Durchlassstrom / On-state current i
100
T
vj
= T
Steuerkennlinie
vjmax
Zündverzug
G
, v
G
= f (i
= f (i
R
T660N
b - 40W / 1ms
≤ 0,5 V
G
A 04/09
G
) with triggering area for V
i
) mit Zündbereichen für V
G
[mA]
10
RRM
, V
RM
c - 60W / 0,5ms
= 0,8 V
RRM
1000
r
= f(di/dt)
TM
D
D
-di/dt [A/µs]
= 12 V
= 12 V
Seite/page
a
GM
= f (t
b
g
) :
c
100
10000
i
2000A
1000A
TM
100A
8/10
500A
200A
50A
20A
=