mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet

mt47h64m8b6-5e-it

Manufacturer Part Number

mt47h64m8b6-5e-it

Description

512mb X4, X8, X16 Ddr2 Sdram

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT47H64M8B6-5E-IT.pdf (122 pages)

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DDR2 SDRAM

MT47H128M4 – 32 Meg x 4 x 4 Banks

MT47H64M8 – 16 Meg x 8 x 4 Banks

MT47H32M16 – 8 Meg x 16 x 4 Banks

Features

• RoHS compliant

• V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Duplicate output strobe (RDQS) option for x8

• DLL to align DQ and DQS transitions with CK

• 4 internal banks for concurrent operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1

• Selectable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8,192-cycle refresh

• On-die termination (ODT)

• Industrial temperature (IT) option

• Automotive temperature (AT) option

• Supports JEDEC clock jitter specification

PDF: 09005aef82f1e6e2/Source: 09005aef821aed36

512Mb_DDR2_x4x8x16_D1.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN

= +1.8V ±0.1V, V

Products and specifications discussed herein are subject to change by Micron without notice.

Q = +1.8V ±0.1V

Options

• Configuration

• FBGA package (Pb-free)

• FBGA package (with lead)

• Timing – cycle time

• Self refresh

• Operating temperature

• Revision

– 128 Meg x 4 (32 Meg x 4 x 4 banks)

– 64 Meg x 8 (16 Meg x 8 x 4 banks)

– 32 Meg x 16 (8 Meg x 16 x 4 banks)

– 84-ball FBGA (12mm x 12.5mm) Rev. B

– 84-ball FBGA (10mm x 12.5mm) Rev. D

– 84-ball FBGA (8mm x 12.5mm) Rev. F

– 60-ball FBGA (12mm x 10mm) Rev. B

– 60-ball FBGA (10mm x 10mm) Rev. D

– 60-ball FBGA (8mm x 10mm) Rev. F

– 84-ball FBGA (12mm x 12.5mm) Rev. B

– 84-ball FBGA (10mm x 12.5mm) Rev. D

– 84-ball FBGA (8mm x 12.5mm) Rev. F

– 60-ball FBGA (12mm x 10mm) Rev. B

– 60-ball FBGA (10mm x 10mm) Rev. D

– 60-ball FBGA (8mm x 10mm) Rev. F

– 2.5ns @ CL = 5 (DDR2-800)

– 2.5ns @ CL = 6 (DDR2-800)

– 3.0ns @ CL = 4 (DDR2-667)

– 3.0ns @ CL = 5 (DDR2-667)

– 3.75ns @ CL = 4 (DDR2-533)

– 5.0ns @ CL = 3 (DDR2-400)

– Standard

– Low-power

– Commercial (0°C ≤ T

– Industrial (–40°C ≤ T

– Automotive, Revision :D only

–40°C ≤ T

(–40°C ≤ T

Notes:

Micron Technology, Inc., reserves the right to change products or specifications without notice.

512Mb: x4, x8, x16 DDR2 SDRAM

1. Not recommended for new designs

≤ 85°C)

, T

≤ 105°C)

≤ 95°C;

≤ 85°C)

Marking

Features

128M4

32M16

64M8

-37E

None

-25E

-5E

/:D

-3E

-25

-3

/:F

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