mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 110

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 73:
Figure 74:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
DQS, DQS#
Command
DQS, DQS#
Command
Address
Address
CK#
CKE
A10
DQ
CK
CK#
CKE
A10
DQ
CK
READ
Valid
T0
READ-to-Power-Down or Self Refresh Entry
READ with Auto Precharge-to-Power-Down or Self Refresh Entry
Valid
READ
T0
Notes:
Notes:
NOP
T1
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
NOP
T1
entry is at T6.
entry is at T6.
RL = 3
RL = 3
NOP
T2
NOP
T2
NOP
T3
NOP
T3
DO
110
DO
DO
Valid
DO
T4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Valid
DO
T4
DO
512Mb: x4, x8, x16 DDR2 SDRAM
DO
Valid
T5
DO
Valid
T5
Transitioning Data
Power-down 2 or
self refresh entry
Transitioning Data
self refresh 2 entry
NOP 1
Power-down or
©2004 Micron Technology, Inc. All rights reserved.
T6
NOP 1
T6
t CKE (MIN)
t CKE (MIN)
Operations
T7
Don’t Care
Don’t Care
T7