mc68hc908ld64 Freescale Semiconductor, Inc, mc68hc908ld64 Datasheet - Page 66

• Manufacturer Part Number: mc68hc908ld64
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

FLASH Memory
4.4 FLASH Control Registers
Data Sheet
66
Address:
Address:
The two FLASH control registers control FLASH program and erase
operations.
This register controls the 47,616-byte array:
This register controls the 13K-byte array:
FLCR1 is used with the OSD FLASH even high byte write buffer
(OSDEHBUF) in programming operations. See
High Byte Write Buffer
The following are bit definitions for FLCR and FLCR1.
HVEN — High-Voltage Enable Bit
Reset:
Reset:
Read:
Write:
Read:
Write:
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
Figure 4-2. 47,616-byte FLASH Control Register (FLCR)
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
Figure 4-3. 13K-byte FLASH Control Register (FLCR1)
$FE0A
$FE07
Bit 7
Bit 7
0
0
0
0
= Unimplemented
= Unimplemented
FLASH Memory
6
0
0
6
0
0
(OSDEHBUF).
5
0
0
5
0
0
4
0
0
4
0
0
HVEN1
HVEN
3
0
3
0
4.4.1 OSD FLASH Even
MC68HC908LD64
MASS1
MASS
Freescale Semiconductor
2
0
2
0
ERASE1
ERASE
1
0
1
0
—
Rev. 3.0
PGM1
PGM
Bit 0
Bit 0
0
0