m52s128168a-7tig Elite Semiconductor Memory Technology Inc., m52s128168a-7tig Datasheet - Page 34

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m52s128168a-7tig

Manufacturer Part Number
m52s128168a-7tig
Description
2m X 16 Bit X 4 Banks Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
ESMT
Write with Auto Precharge (@BL=8)
C O M M A N D
Note 1.
Elite Semiconductor Memory Technology Inc.
B A 0 , B A 1
( A 0 ~ A n )
A D D R
A
1 0
C L K
C K E
C L K
R A S
D Q S
C A S
/ A P
W E
C S
D M
D Q
The row active command of the precharge bank can be issued after t
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
0
WRITE
BAa
C a
1
D a 0
2
D a 1
Preliminary
D a 2
3
D a 3
D a 4
4
D a 5
H I G H
D a 6
5
D a 7
RP
6
from this point.
t
W R
t
D A L
Revision : 1.4
7
Publication Date : Sep. 2008
N o t e 1
8
A u t o p r e c h a r g e s t a r t
M53D128168A
t
R P
9
ACTIVE
BAa
R a
R a
34/47
10

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