m52s64164a Elite Semiconductor Memory Technology Inc., m52s64164a Datasheet - Page 3

• Manufacturer Part Number: m52s64164a
• Description: 1m X 16 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ABSOLUTE MAXIMUM RATINGS
Note:
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V
Note:
CAPACITANCE
Elite Semiconductor Memory Technology Inc.
(CLK, CKE, CS , RAS , CAS , WE &
L(U)DQM)
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
Data input/output capacitance (DQ0 ~ DQ15)
PARAMETER
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. D
IH(max)
IL(min)
out
PARAMETER
DD
is disabled , 0V
supply relative to V
PARAMETER
= -1.0V AC for pulse width
= 3.0V AC for pulse width
(V
DD
= 2.5V, T
≤
V
IN
SS
≤
≤
V
A
SYMBOL
V
SS
DD
= 25 C
V
OUT
V
V
DDQ
V
V
, V
I
I
OL
OH
OL
IL
IH
IL
° , f = 1MHZ)
DDQ
, all other pins are not under test = 0V.
≤
V
≤
≤
DDQ
3ns acceptable.
3ns acceptable.
.
0.8xV
V
SYMBOL
V
V
DDQ
MIN
DD
-0.3
-10
-10
IN
2.3
SYMBOL
T
-
, V
P
I
, V
-0.2
STG
OS
DDQ
C
D
C
C
OUT
DDQ
OUT
IN1
IN2
SS
= 0V, T
TYP
2.5
0
-
-
-
-
-
A
= 0 to 70 C
MIN
-
-
-
-55 ~ +150
-1.0 ~ 3.6
-1.0 ~ 3.6
V
VALUE
DDQ
° )
MAX
2.7
0.3
0.2
50
10
10
1
-
+0.3
Publication Date: Sep. 2008
Revision: 1.4
MAX
4
4
6
M52S64164A
UNIT
μ
μ
V
V
V
V
V
A
A
UNIT
mA
I
°
W
I
V
V
OH
C
OL
NOTE
UNIT
= -0.1mA
= 0.1mA
pF
pF
pF
1
2
3
4
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