m52s64164a Elite Semiconductor Memory Technology Inc., m52s64164a Datasheet - Page 32

• Manufacturer Part Number: m52s64164a
• Description: 1m X 16 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Read & Write Cycle at Same Bank @ Burst Length = 4
*Note :
Elite Semiconductor Memory Technology Inc.
1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is
3. Output will be Hi-Z after the end of burst. (1,2,4,8 & Full page bit burst)
available after Row precharge. Last valid output will be Hi-Z (t
SHZ
) after the clock.
Publication Date: Sep. 2008
Revision: 1.4
M52S64164A
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