MC68HC908JL8 MOTOROLA [Motorola, Inc], MC68HC908JL8 Datasheet - Page 54

• Manufacturer Part Number: MC68HC908JL8
• Description: Motorola reserves the right to make changes without further notice to any products herein
• Manufacturer: MOTOROLA [Motorola, Inc]

FLASH Memory (FLASH)
4.7 FLASH Program Operation
Technical Data
54
NOTE:
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 32 consecutive bytes starting from addresses $XX00,
$XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
(Figure 4-3
This program sequence is repeated throughout the memory until all data
is programmed.
The time between each FLASH address change (step 7 to step 7), or the
time between the last FLASH addressed programmed to clearing the
PGM bit (step 7 to step 10), must not exceed the maximum programming
time, t
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
10. Clear the PGM bit.
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
1. Set the PGM bit. This configures the memory for program
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
8. Wait for time, t
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
Freescale Semiconductor, Inc.
For More Information On This Product,
operation and enables the latching of address and data for
programming.
the row to be programmed.
again.
prog
max.
shows a flowchart of the programming algorithm.)
Go to: www.freescale.com
FLASH Memory (FLASH)
rcv
prog
nvh
(1µs), the memory can be accessed in read mode
nvs
pgs
(5µs).
(30µs).
(10µs).
(5µs).
MC68HC908JL8
MOTOROLA
—
Rev. 2.0