S71GL064A08 SPANSION [SPANSION], S71GL064A08 Datasheet - Page 16

• Manufacturer Part Number: S71GL064A08
• Description: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
• Manufacturer: SPANSION [SPANSION]

General Description
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The S29GL064A is a 64 Mb, organized as 4,194,304 words or 8,388,608 bytes.
Access times as fast as 90 ns are available. Note that each access time has a specific operat-
ing voltage range (VCC) as specified in the
separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
Each device requires only a single 3.0 volt power supply for both read and write functions.
In addition to a VCC input, a high-voltage accelerated program (ACC) feature provides
shorter programming times through increased current on the WP#/ACC input. This feature is
intended to facilitate factory throughput during system production, but may also be used in
the field if desired.
The device is entirely command set compatible with the JEDEC single-power-supply Flash
standard. Commands are written to the device using standard microprocessor write timing.
Write cycles also internally latch addresses and data needed for the programming and erase
operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed
without affecting the data contents of other sectors. The device is fully erased when shipped
from the factory.
Device programming and erasure are initiated through command sequences. Once a program
or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6
(toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether
the operation is complete. To facilitate programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write cycles to program data instead of four.
Hardware data protection measures include a low VCC detector that automatically inhibits
write operations during power transitions. The hardware sector protection feature disables
both program and erase operations in any combination of sectors of memory. This can be
achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature allows the host system to pause an erase op-
eration in a given sector to read or program any other sector and then complete the erase
operation. The Program Suspend/Program Resume feature enables the host system to
pause a program operation in a given sector to read any other sector and then complete the
program operation.
The hardware RESET# pin terminates any operation in progress and resets the device, after
which it is then ready for a new operation. The RESET# pin may be tied to the system reset
circuitry. A system reset would thus also reset the device, enabling the host system to read
boot-up firmware from the Flash memory device.
The device reduces power consumption in the standby mode when it detects specific voltage
levels on CE# and RESET#, or when addresses have been stable for a specified period of time.
The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on
the WP#/ACC pin or WP# pin, depending on model number. The protected sector will still be
protected even during accelerated programming.
The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can
be permanently protected. Once this sector is protected, no further changes within the sector
can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experi-
ence to produce the highest levels of quality, reliability and cost effectiveness. The device
electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data
is programmed using hot electron injection.
A d v a n c e
S71GL064A based MCPs
Product Selector Guide
I n f o r m a t i o n
section. Each device has
S71GL064A_00_A2 February 8, 2005