GS880E32T-100 GSI [GSI Technology], GS880E32T-100 Datasheet - Page 14
![no-image](/images/no-image-200.jpg)
GS880E32T-100
Manufacturer Part Number
GS880E32T-100
Description
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS880E32T-100.pdf
(25 pages)
Operating Currents
Rev: 1.11 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Operating
Parameter
Deselect
Standby
Current
Current
Current
Device Deselected;
ZZ V
All other inputs
All other inputs
Test Conditions
Device Selected;
Output open
V
V
IH
IH
or V
DD
or
- 0.2V
V
IL
IL
Flow-Thru
Flow-Thru
Flow-Thru
Symbol
Pipeline
Pipeline
Pipeline
I
I
I
I
I
I
DD
DD
DD
DD
SB
SB
70°C
225
180
30
30
80
65
to
0
-11
85°C
–40
235
190
40
40
90
75
to
14/25
70°C
225
180
30
30
80
65
0
to
-11.5
85°C
–40
235
190
40
40
90
75
to
70°C
225
180
30
30
80
65
to
0
-100
GS880E18/32/36T-11/11.5/100/80/66
85°C
–40
235
190
40
40
90
75
to
70°C
200
175
30
30
70
55
to
0
-80
© 2000, Giga Semiconductor, Inc.
85°C
–40
210
185
40
40
80
65
to
70°C
185
165
30
30
60
50
to
0
-66
Preliminary
85°C
–40
195
175
40
40
70
60
to
Unit
mA
mA
mA
mA
mA
mA