GS880E32T-100 GSI [GSI Technology], GS880E32T-100 Datasheet - Page 21
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GS880E32T-100
Manufacturer Part Number
GS880E32T-100
Description
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS880E32T-100.pdf
(25 pages)
Preliminary
GS880E18/32/36T-11/11.5/100/80/66
Sleep Mode Timing Diagram
CK
tH
tS
tKC
tKH tKL
ADSP
ADSC
tZZS
tZZH
tZZR
ZZ
Snooze
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on
dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address
boundary crossings) but greater care must be exercised to avoid excessive bus contention.
Rev: 1.11 11/2000
21/25
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.