MT46V64M8P-6T:F Micron Technology Inc, MT46V64M8P-6T:F Datasheet - Page 55

IC DDR SDRAM 512MBIT 6NS 66TSOP

MT46V64M8P-6T:F

Manufacturer Part Number
MT46V64M8P-6T:F
Description
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V64M8P-6T:F

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (64M x 8)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
64Mx8
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
175mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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REGISTER DEFINITION
Mode Register
Figure 23:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Mode Register Definition
Notes:
Mn + 2
The mode register is used to define the specific DDR SDRAM mode of operation. This
definition includes the selection of a burst length, a burst type, a CAS latency, and an
operating mode, as shown in Figure 23. The mode register is programmed via the LMR
command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is
programmed again or until the device loses power (except for bit A8, which is self-
clearing).
Reprogramming the mode register will not alter the contents of the memory, provided it
is performed correctly. The mode register must be loaded (reloaded) when all banks are
idle and no bursts are in progress, and the controller must wait the specified time before
initiating the subsequent operation. Violating either of these requirements will result in
unspecified operation.
Mode register bits A0–A2 specify the burst length, A3 specifies the type of burst (sequen-
tial or interleaved), A4–A6 specify the CAS latency, and A7–An specify the operating
mode.
1. n is the most significant row address bit from Table 2 on page 2.
Mn
0
0
0
0
1
1
. . .
0
0
Mn + 1
M9
0
1
0
1
0
0
M8
n + 2
0
1
Mode Register Definition
Base mode register
Extended mode register
Reserved
Reserved
0
M7
0
0
BA1
n + 1
0
M6–M0
Valid
Valid
BA0
n 1
Operating mode
An
. . .
Operating Mode
Normal operation
Normal operation/reset DLL
All other states reserved
. . .
55
9
A9
8
A8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
A7 A6 A5 A4 A3
CAS Latency BT
6
M3
0
1
5
512Mb: x4, x8, x16 DDR SDRAM
Burst Type
Interleaved
Sequential
4
3
Burst length
2
A2 A1 A0
M6
0
0
0
0
1
1
1
1
1
M2
0
0
0
0
1
1
1
1
M5
©2000 Micron Technology, Inc. All rights reserved.
0
0
1
1
0
0
1
1
0
M1
0
0
1
1
0
0
1
1
M4
0
1
0
1
0
1
0
1
Address bus
Mode register
(Mx)
M0
0
1
0
1
0
1
0
1
CAS Latency
3 (-5B only)
Burst Length
Reserved
Reserved
Reserved
Reserved
Reserved
Operations
Reserved
Reserved
Reserved
Reserved
Reserved
2.5
2
2
4
8

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