MT46V64M8P-6T:F Micron Technology Inc, MT46V64M8P-6T:F Datasheet - Page 77

IC DDR SDRAM 512MBIT 6NS 66TSOP

MT46V64M8P-6T:F

Manufacturer Part Number
MT46V64M8P-6T:F
Description
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V64M8P-6T:F

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (64M x 8)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
64Mx8
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
175mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46V64M8P-6T:F
Manufacturer:
MICRON
Quantity:
6 538
Part Number:
MT46V64M8P-6T:F
Manufacturer:
IR
Quantity:
8 000
Part Number:
MT46V64M8P-6T:F
Manufacturer:
MICRON/美光
Quantity:
20 000
Figure 42:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Uninterrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4.
5. The READ and WRITE commands are to the same device. However, the READ and WRITE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
t
commands may be to different devices, in which case
command could be applied earlier.
DI
b
WTR is referenced from the first positive CK edge after the last data-in pair.
NOP
DI
T1
b
DI
b
T1n
NOP
T2
T2n
77
NOP
T3
t
WTR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank a,
READ
T4
Col n
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
t
WTR is not required, and the READ
CL = 2
CL = 2
CL = 2
T5
NOP
©2000 Micron Technology, Inc. All rights reserved.
T6
NOP
Operations
Don’t Care
DO
DO
DO
n
n
n
T6n

Related parts for MT46V64M8P-6T:F