MT46V64M8P-6T:F Micron Technology Inc, MT46V64M8P-6T:F Datasheet - Page 7

• Manufacturer Part Number: MT46V64M8P-6T:F
• Description: IC DDR SDRAM 512MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M8P-6T:F

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 175mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Functional Block Diagrams
Figure 3:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
512Mb_DDR_x4x8x16_D2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
BA0, BA1
A0–A12,
RAS#
CAS#
WE#
CKE
CK#
CS#
CK
15
128 Meg x 4 Functional Block Diagram
ADDRESS
REGISTER
MODE REGISTERS
CONTROL
LOGIC
15
The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory
containing 536,870,912 bits. It is internally configured as a 4-bank DRAM.
COUNTER
REFRESH
13
12
2
13
ADDRESS
2
ROW-
MUX
COUNTER/
CONTROL
COLUMN-
ADDRESS
LATCH
BANK
LOGIC
13
DECODER
ADDRESS
BANK0
LATCH
ROW-
&
11
1
8192
SENSE AMPLIFIERS
(8,192 x 2,048 x 8)
DM MASK LOGIC
I/O GATING
DECODER
MEMORY
COLUMN
7
ARRAY
BANK0
2048
(x8)
BANK1
BANK2
16384
BANK3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8
8
512Mb: x4, x8, x16 DDR SDRAM
8
LATCH
READ
Out
CK
CK
DRIVERS
WRITE
FIFO
4
4
&
Functional Block Diagrams
CK
In
COL0
MUX
MASK
DATA
COL0
8
2
1
1
4
4
GENERATOR
REGISTERS
©2000 Micron Technology, Inc. All rights reserved.
INPUT
DQS
4
1
1
4
4
DATA
1
1
4
1
DRVRS
DQS
CK
DLL
RCVRS
DQ0–DQ3
DQS
DM