LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 14

• Manufacturer Part Number: LH28F320SKTD-ZR
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320SKTD-ZR

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2463; LHF32KZR

3.7 Write
Writing commands to the CUI enable reading of
device data and identifier codes. They also control
inspection and clearing of the status register. When
V
additionally controls block erase, bank erase, (multi)
word/byte write and block lock-bit configuration.
The Block Erase command requires appropriate
command data and an address within the block to be
erased. The Word/byte Write command requires the
command and address of the location to be written.
Set Block Lock-Bit command requires the command
and block address within the device (Block Lock) to
be locked. The Clear Block Lock-Bits command
requires the command and address within the device.
The CUI does not occupy an addressable memory
location. It is written when WE# and BE# are active.
The address and data needed to execute a command
are latched on the rising edge of WE# or BE#
(whichever goes high first). Standard microprocessor
write timings are used. Figures 20 and 21 illustrate
WE# and BE#-controlled write operations.
CC
=V
CC1/2/3/4
and
V
PP
=V
PPH1/2/3
,
the
CUI
LHF32KZR
4 COMMAND DEFINITIONS
When the V
the status register, identifier codes, query, or blocks
are enabled. Placing V
successful block erase, bank erase, (multi) word/byte
write and block lock-bit configuration operations.
Device operations are selected by writing specific
commands into the CUI. Table 4 defines these
commands.
PP
voltage ≤ V
PPLK,
PPH1/2/3
Read operations from
on V
PP
enables
11