LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 50
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LH28F320SKTD-ZR
Manufacturer Part Number
LH28F320SKTD-ZR
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet
1.LH28F320SKTD-ZR.pdf
(70 pages)
Specifications of LH28F320SKTD-ZR
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-2463
LHF32KZR
LHF32KZR
NOTES:
1. In systems where BE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold and
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
SHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVSL
Sym.
inactive WE# times should be measured relative to the BE# waveform.
configuration.
lock-bit configuration success (SR.1/3/4/5=0).
Configuration) for testing characteristics.
Configuration) for testing characteristics.
PP
should be held at V
Write Cycle Time
RP# High Recovery to BE# Going Low
WE# Setup to BE# Going Low
BE# Pulse Width
WP# V
V
Address Setup to BE# Going High
Data Setup to BE# Going High
Data Hold from BE# High
Address Hold from BE# High
WE# Hold from BE# High
BE# Pulse Width High
BE# High to STS Going Low
Write Recovery before Read
V
WP# V
High Z
PP
PP
Setup to BE# Going High
Hold from Valid SRD, STS High Z
Versions
IH
IH
Setup to BE# Going High
Hold from Valid SRD, STS
Parameter
PPH1/2/3
IN
and D
until determination of block erase, bank erase, (multi) word/byte write or block
V
CC
IN
=5V±0.5V, 5V±0.25V, T
for block erase, bank erase, (multi) word/byte write or block lock-bit
LHF32KZR
Notes
2,4
2,4
2
2
2
3
3
V
Min.
A
100
100
CC
70
50
40
40
25
=0°C to +70°C
1
0
5
5
0
0
0
0
=5V±0.25V
Max.
90
(5)
V
Min.
100
100
80
50
40
40
25
CC
1
0
5
5
0
0
0
0
=5V±0.5V
Max.
90
(6)
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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