LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 54
![no-image](/images/manufacturer_photos/0/6/603/sharp_microelectronics_sml.jpg)
LH28F320SKTD-ZR
Manufacturer Part Number
LH28F320SKTD-ZR
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet
1.LH28F320SKTD-ZR.pdf
(70 pages)
Specifications of LH28F320SKTD-ZR
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-2463
LHF32KZR
LHF32KZR
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NOTE:
See 5.0V V
notes 1 through 3.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRZ1
EHRZ1
WHRZ2
EHRZ2
Sym.
Word/Byte Write Time
(using W/B write, in word mode)
Word/Byte Write Time
(using W/B write, in byte mode)
Word/Byte Write Time
(using multi word/byte write)
Block Write Time
(using W/B write, in word mode)
Block Write Time
(using W/B write, in byte mode)
Block Write Time
(using multi word/byte write)
Block Erase Time
Bank Erase Time
Set Block Lock-Bit Time
Clear Block Lock-Bits Time
Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
CC
Block Erase, Bank Erase, (Multi) Word/Byte Write and Block Lock-Bit Configuration Performance for
Parameter
V
CC
=3.3V±0.3V, T
LHF32KZR
Notes
2
2
2
2
2
2
2
2
2
A
=0°C to +70°C
Typ.
21.75
19.51
21.75
5.66
0.72
1.28
0.36
0.55
17.6
0.55
15.2
V
7.1
PP
(1)
=3.0V-3.6V
Max.
16.5
21.1
250
250
250
320
250
8.2
4.1
10
10
10
Typ.
12.95
12.95
12.95
0.43
0.85
0.18
0.41
13.1
0.41
12.3
V
2.7
6.6
PP
(1)
=4.5V-5.5V
Max.
10.9
17.2
180
180
180
320
180
4.8
9.3
10
10
2
Unit
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
51
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