LH28F320SKTD-ZR Sharp Microelectronics, LH28F320SKTD-ZR Datasheet - Page 52

• Manufacturer Part Number: LH28F320SKTD-ZR
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320SKTD-ZR

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2463; LHF32KZR

6.2.7 RESET OPERATIONS
NOTES:
1. If RP# is asserted while a block erase, bank erase, (multi) word/byte write or block lock-bit configuration
2. A reset time, t
3. When the device power-up, holding RP# low minimum 100ns is required after V
Symbol
t
t
t
PLPH
PLRZ
235VPH
operation is not executing, the reset will complete within 100ns.
and also has been in stable there.
RP# Pulse Low Time
(If RP# is tied to V
specification is not applicable)
RP# Low to Reset during
Block Erase, Bank Erase,
(Multi) Word/Byte Write or
Block Lock-Bit Configuration
V
V
V
CC
CC
CC
at 2.7V to RP# High
at 3.0V to RP# High
at 4.5V to RP# High
PHQV
STS(R)
STS(R)
RP#(P)
RP#(P)
RP#(P)
V
Parameter
CC
, is required from the latter of STS going High Z or RP# going high until outputs are valid.
High Z
High Z
2.7/3.3/5V
V
V
V
V
V
V
V
V
V
OL
OL
IH
IL
IH
IL
IL
IH
IL
CC
, this
Figure 22. AC Waveform for Reset Operation
(B)Reset During Block Erase, Bank Erase, (Multi) Word/Byte Write
t
t
Notes
PLPH
PLPH
or Block Lock-Bit Configuretion
1,2
Reset AC Specifications
3
(A)Reset During Read Array Mode
LHF32KZR
Min.
100
100
(C)V
t
t
235VPH
PLRZ
V
CC
CC
=2.7V
Power Up Timing
Max.
21.5
Min.
100
100
V
CC
=3.3V
Max.
21.1
CC
has been in predefined range
Min.
100
100
V
CC
=5V
Max.
13.1
Unit
ns
µs
ns
49