MC9S12NE64VTU Freescale Semiconductor, MC9S12NE64VTU Datasheet - Page 67

• Manufacturer Part Number: MC9S12NE64VTU
• Description: IC MCU 25MHZ ETHERNET/PHY 80TQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12NE64VTU

• Mfg Application Notes: MC9S12NE64 Integrated Ethernet Controller Implementing an Ethernet Interface with the MC9S12NE64 Web Server Development with MC9S12NE64 and Open TCP
• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: EBI/EMI, Ethernet, I²C, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.375 V ~ 3.465 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 80-TQFP Exposed Pad, 80-eTQFP, 80-HTQFP, 80-VQFP
• Data Bus Width: 16 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 70
• Number Of Timers: 16 bit
• Operating Supply Voltage: - 0.3 V to + 3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• On-chip Adc: 10 bit
• For Use With: EVB9S12NE64E - BOARD EVAL FOR 9S12NE64DEMO9S12NE64E - DEMO BOARD FOR 9S12NE64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Chapter 2
64 Kbyte Flash Module (S12FTS64KV3)
2.1
This document describes the FTS64K module that includes a 64Kbyte Flash (nonvolatile) memory. The
Flash memory may be read as either bytes, aligned words, or misaligned words. Read access time is one
bus cycle for bytes and aligned words, and two bus cycles for misaligned words.
The Flash memory is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The Flash module supports both block erase and
sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program
and erase the Flash memory is generated internally. It is not possible to read from a Flash block while it is
being erased or programmed.
2.1.1
Command Write Sequence — A three-step MCU instruction sequence to execute built-in algorithms
(including program and erase) on the Flash memory.
2.1.2
2.1.3
Program, erase, erase verify, and data compress operations (please refer to
Freescale Semiconductor
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64 Kbytes of Flash memory comprised of one 64 Kbyte block divided into 128 sectors of 512 bytes
Automated program and erase algorithm
Interrupts on Flash command completion, command buffer empty
Fast sector erase and word program operation
2-stage command pipeline for faster multi-word program times
Sector erase abort feature for critical interrupt response
Flexible protection scheme to prevent accidental program or erase
Single power supply for all Flash operations including program and erase
Security feature to prevent unauthorized access to the Flash memory
Code integrity check using built-in data compression
Introduction
Glossary
Features
Modes of Operation
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
MC9S12NE64 Data Sheet, Rev. 1.1
CAUTION
Section 2.4.1
for details).
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