D13003TF16V Renesas Electronics America, D13003TF16V Datasheet - Page 153

• Manufacturer Part Number: D13003TF16V
• Description: IC H8/3003 ROMLESS 112QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of D13003TF16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 50
• Program Memory Type: ROMless
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

DDR Write Timing: Data written to a data direction register (DDR) to change a CS
CS
cycle. Figure 6-21 shows the timing when the CS
output.
6.4.3
After driving the BREQ pin low, hold it low until BACK goes low. If BREQ returns to the high
level before BACK goes low, the bus arbiter may operate incorrectly.
To terminate the external-bus-released state, hold the BREQ signal high for at least three states.
If BREQ is high for too short an interval, the bus arbiter may operate incorrectly.
n
output to generic input, or vice versa, takes effect starting from the T
BREQ Input Timing
ø
Address
CS
1
High impedance
Figure 6-21 DDR Write Timing
T
1
133
1
P8DDR address
pin is changed from generic input to CS
T
2
T
3
3
state of the DDR write
n
pin from
1