D13003TF16V Renesas Electronics America, D13003TF16V Datasheet - Page 180

IC H8/3003 ROMLESS 112QFP

D13003TF16V

Manufacturer Part Number
D13003TF16V
Description
IC H8/3003 ROMLESS 112QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of D13003TF16V

Core Processor
H8/300H
Core Size
16-Bit
Speed
16MHz
Connectivity
SCI
Peripherals
DMA, PWM, WDT
Number Of I /o
50
Program Memory Type
ROMless
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D13003TF16V
Manufacturer:
RENESAS
Quantity:
210
Part Number:
D13003TF16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
7.3.3 Pseudo-Static RAM Refresh Control
Refresh Request Interval and Refresh Cycle Execution: The refresh request interval is
determined as in a DRAM interface, by the settings of RTCOR and bits CKS2 to CKS0 in
RTMCSR. The numbers of states required for pseudo-static RAM read/write cycles and refresh
cycles are the same as for DRAM (see table 7-4). The state transitions are as shown in figure 7-3.
Pseudo-Static RAM Control Signals: Figure 7-15 shows the control signals for pseudo-static
RAM read, write, and refresh cycles.
ø
Address
bus
CS
RD
HWR
LWR
RFSH
AS
Note:
3
*
16-bit access
Figure 7-15 Pseudo-Static RAM Control Signal Output Timing
Read cycle
160
Write cycle *
Area 3 top address
Refresh cycle

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