STM32F101VDT6 STMicroelectronics, STM32F101VDT6 Datasheet - Page 77

MCU ARM 32BIT 384K FLASH 100LQFP

STM32F101VDT6

Manufacturer Part Number
STM32F101VDT6
Description
MCU ARM 32BIT 384K FLASH 100LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F101VDT6

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
80
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Processor Series
STM32F101x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
48 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
80
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STM3210E-EVAL
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
On-chip Dac
12 bit, 2 Channel
Featured Product
STM32 Cortex-M3 Companion Products
Eeprom Size
-
For Use With
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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STM32F101xC, STM32F101xD, STM32F101xE
5.3.13
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
performed under the conditions summarized in
compliant.
Table 45.
1. FT = Five-volt tolerant.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable
All I/Os are CMOS and TTL compliant (no software configuration required), their
characteristics consider the most strict CMOS-technology or TTL parameters:
Symbol
V
R
R
C
V
V
V
V
I
production.
PMOS/NMOS. This PMOS/NMOS contribution
lkg
hys
PU
PD
IH
IH
IO
IL
IL
For V
For V
Input low level voltage
Standard IO input high level
voltage
IO FT
Input low level voltage
Input high level voltage
Standard IO Schmitt trigger
voltage hysteresis
IO FT Schmitt trigger voltage
hysteresis
Input leakage current
Weak pull-up equivalent
resistor
Weak pull-down equivalent
resistor
I/O pin capacitance
if V
if V
if V
if V
IH
IL
:
:
I/O static characteristics
DD
DD
DD
DD
(1)
(4)
(5)
is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included
is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included
is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included
is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included
input high level voltage
Parameter
(2)
(2)
(3)
Doc ID 14610 Rev 7
V
Standard I/Os
to the series resistance is minimum
CMOS ports
SS
Conditions
TTL ports
V
V
V
I/O FT
IN
IN
IN
V


= 5 V
IN
Table
V
V
SS
DD
V
DD
Table 45
10. All I/Os are CMOS and TTL
5% V
0.65 V
–0.5
–0.5
Min
200
30
30
2
2
are derived from tests
DD
DD
(3)
Electrical characteristics
(~10% order)
Typ
40
40
5
0.35 V
V
V
.
DD
DD
5.5V
Max
0.8
1
50
50
3
+0.5
+0.5
DD
77/106
Unit
mV
mV
k
k
µA
pF
V
V

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