HD64F3048F16 Renesas Electronics America, HD64F3048F16 Datasheet - Page 202

• Manufacturer Part Number: HD64F3048F16
• Description: IC H8 MCU FLASH 128K 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048F16

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Package: 100PQFP
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 70
• Interface Type: SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 5
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 7 Refresh Controller
2CAS
The CAS/WE bit in RFSHCR can select two control modes for 16-bit-wide DRAM: one using
UCAS and LCAS; the other using UW and LW. These DRAM pins correspond to H8/3048B
Group pins as shown in table 7.6.
Table 7.6
H8/3048B Group Pin
HWR
LWR
RD
CS
Figure 7.5 (1) shows the interface timing for 2WE DRAM. Figure 7.5 (2) shows the interface
timing for 2CAS DRAM.
Rev. 3.00 Sep 27, 2006 page 174 of 872
REJ09B0325-0300
CAS
CAS and 2WE
CAS
3
Address
bus
CS
(RAS)
RD
(CAS)
HWR
(UW)
LWR
(LW)
RFSH
AS
Note: * 16-bit access
3
WE
WE
WE Modes
DRAM Pins and H8/3048B Group Pins
Figure 7.5(1) DRAM Control Signal Output Timing (2WE
Row
Read cycle
UW
CAS/WE
LW
CAS
RAS
Column
WE
WE
WE = 0 (2WE
Row
WE
WE
WE Mode)
Write cycle
Column
*
DRAM Pin
CAS/WE
UCAS
LCAS
WE
RAS
Area 3 top address
WE
WE
WE = 1 (2CAS
Refresh cycle
WE Mode)
WE
WE
CAS
CAS Mode)
CAS