HD64F3048F16 Renesas Electronics America, HD64F3048F16 Datasheet - Page 648

• Manufacturer Part Number: HD64F3048F16
• Description: IC H8 MCU FLASH 128K 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048F16

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Package: 100PQFP
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 70
• Interface Type: SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 5
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
4. Do not input a constant high level to the FWE pin.
5. Program/erase the flash memory in accordance with the recommended algorithms.
6. Do not set/clear the SWE bit while a program is executing on flash memory.
Rev. 3.00 Sep 27, 2006 page 620 of 872
REJ09B0325-0300
c. In the boot mode, perform FWE pin High/Low switching during reset.
d. In the user program mode, FWE = High/Low switching is possible regardless of the RES
e. Apply an input to FWE when the program is not running away.
f. Release FWE pin input only when the SWE, ESU, PSU, EV, PV, E, and P bits in FLMCR1
To prevent erroneous programming/erasing in the event of program runaway, etc., input a high
level to the FWE pin only when programming/erasing flash memory (including flash memory
emulation by RAM). Avoid system configurations that constantly input a high level to the
FWE pin. Handle program runaway, etc. by starting the watchdog timer so that flash memory
is not overprogrammed/overerased even while a high level is input to the FWE pin.
The recommended algorithms can program/erase the flash memory without applying voltage
stress to the device or sacrificing the reliability of the program data.
When setting the P and E bits in FLMCR1, set the watchdog timer for program runaway, etc.
Accesses to flash memory by means of an MOV instruction, etc., are prohibited while bit
P or bit E is set.
Before performing flash memory program execution or data read, clear the SWE bit.
If the SWE bit is set, the flash data can be reprogrammed, but flash memory cannot be
accessed for purposes other than verify (verify during programming/erase).
In transition to the boot mode, input FWE = high level and set MD
while the RES input is low. At this time, the FWE, MD
satisfy the mode programming setup time (t
programming setup time is necessary for RES reset timing even in transition from the boot
mode to another mode.
In reset during operation, the RES pin must be held at a low level for at least 20 system
clocks.
input.
FWE input switching is also possible during program execution on flash memory.
When applying an input to the FWE pin, the program execution state must be supervised
using a watchdog timer, etc.
are cleared.
Do not erroneously set any of bits SWE, ESU, PSU, EV, PV, E, or P when applying or
releasing FWE.
MDS
) relative to the reset clear timing. The mode
2
to MD
0
, and RXD1 inputs must
2
to MD
0
and RXD1 pins