MC68HC908JB16DW Freescale Semiconductor, MC68HC908JB16DW Datasheet - Page 62

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MC68HC908JB16DW

Manufacturer Part Number
MC68HC908JB16DW
Description
IC MCU 16K FLASH 6MHZ USB 28SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908JB16DW

Core Processor
HC08
Core Size
8-Bit
Speed
6MHz
Connectivity
SCI, USB
Peripherals
LED, LVD, POR, PWM
Number Of I /o
21
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-

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FLASH Memory
4.5 FLASH Block Erase Operation
Technical Data
62
NOTE:
NOTE:
Use the following procedure to erase a block of FLASH memory. A block
consists of 512 consecutive bytes starting from addresses $X000,
$X200, $X400, $X600, $X800, $XA00, $XC00 or $XE00. The 48-byte
user interrupt vectors area also forms a block. Any block within the 16K
bytes user memory area ($BA00–$F9FF) can be erased alone.
The 48-byte user interrupt vectors, $FFD0–$FFFF, cannot be erased by
the block erase operation because of security reasons. Mass erase is
required to erase this block.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Write any data to any FLASH address within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
register.
the block to be erased.
again.
FLASH Memory
rcv
(1µs), the memory can be accessed in read mode
Erase
nvs
nvh
(5µs).
(5µs).
(10ms).
MC68HC908JB16
Freescale Semiconductor
Rev. 1.1

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