MOSFET N-CH 200V 18A TO-220F-3

FDPF18N20FT

Manufacturer Part NumberFDPF18N20FT
DescriptionMOSFET N-CH 200V 18A TO-220F-3
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF18N20FT datasheet
 


Specifications of FDPF18N20FT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs140 mOhm @ 9A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C18AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs26nC @ 10VInput Capacitance (ciss) @ Vds1180pF @ 25V
Power - Max41WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.12 Ohms
Forward Transconductance Gfs (max / Min)13.6 SDrain-source Breakdown Voltage200 V
Continuous Drain Current18 APower Dissipation41 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP18N20F / FDPF18N20FT
N-Channel MOSFET
200V, 18A, 0.14Ω
Features
• R
= 0.12Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 20nC)
• Low C
( Typ. 24pF)
rss
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. A
Description
= 9A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
September 2009
UniFET
D
G
S
FDP18N20F FDPF18N20FT
200
±30
18
18*
10.8
10.8*
(Note 1)
72
72*
(Note 2)
324
(Note 1)
18
(Note 1)
10
(Note 3)
4.5
100
41
0.83
0.33
-55 to +150
300
FDP18N20F FDPF18N20FT
1.2
3.0
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF18N20FT Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. A Description = 9A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

  • Page 2

    ... Starting ≤ 18A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP18N20F / FDPF18N20FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

  • Page 3

    ... V GS 0.15 0. Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = C gd 1500 1000 500 0 0 Drain-Source Voltage [V] DS FDP18N20F / FDPF18N20FT Rev. A Figure 2. Transfer Characteristics *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage = 10V V = 20V GS o *Note Figure 6. Gate Charge Characteristics ...

  • Page 4

    ... Single Pulse 0. Drain-Source Voltage [V] DS Figure 10-1. Transient Thermal Response Curve - FDP18N20F 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDP18N20F / FDPF18N20FT Rev. A (Continued) Figure 8-1. Maximum Safe Operating Area *Notes µ 250 A D 100 150 200 o C] µ µ ...

  • Page 5

    ... Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT 2 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP18N20F / FDPF18N20FT Rev Rectangular Pulse Duration [sec *Notes (t) = 3.0 C/W Max. θ Duty Factor (t) θ www.fairchildsemi.com ...

  • Page 6

    ... FDP18N20F / FDPF18N20FT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP18N20F / FDPF18N20FT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP18N20F / FDPF18N20FT Rev. A TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : 4000V FDP18N20F / FDPF18N20FT Rev. A TO-220F Potted 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP18N20F / FDPF18N20FT Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...