MCIMX253CVM4 Freescale Semiconductor, MCIMX253CVM4 Datasheet - Page 34

• Manufacturer Part Number: MCIMX253CVM4
• Description: IC MPU I.MX25 IND 400MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX25r

Specifications of MCIMX253CVM4

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: External Program Memory
• Ram Size: 144K x 8
• Voltage - Supply (vcc/vdd): 1.15 V ~ 1.52 V
• Data Converters: A/D 3x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 400-LFBGA
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Compliant

34
Output pad propagation delay (max. drive),
50%–50%
Output pad propagation delay (high drive),
50%–50%
Output pad propagation delay (standard
drive), 50%–50%
Output pad propagation delay (max. drive),
40%–60%
Output pad propagation delay (high drive),
40%–60%
Output pad propagation delay (standard
drive), 40%–60%
Output enable to output valid delay (max.
drive), 50%–50%
Output enable to output valid delay (high
drive), 50%–50%
Output enable to output valid delay
(standard drive), 50%–50%
Output enable to output valid delay (max.
drive), 40%–60%
Output enable to output valid delay (high
drive), 40%–60%
Output enable to output valid delay
(standard drive), 40%–60%
Output pad slew rate (max. drive)
Output pad slew rate (high drive)
Output pad slew rate (standard drive)
Output pad dI/dt (max. drive)
Output pad dI/dt (high drive)
Output pad di/dt (standard drive)
Input pad transition times
Input pad propagation delay, 50%–50%
Input pad propagation delay, 40%–60%
Parameter
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 6
Table 22. AC Parameters for Mobile DDR I/O (continued)
Symbol
tpo
tpo
tpo
tpo
tpo
tpo
tpv
tpv
tpv
tpv
tpv
tpv
tps
tps
tps
tdit
tdit
tdit
trfi
tpi
tpi
Condition
1.0 pF
1.0 pF
1.0 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
Load
0.80/1.03
1.06/1.32
1.04/1.27
1.63/1.90
1.55/1.80
2.72/3.06
0.80/0.91
1.06/1.12
1.04/1.09
1.63/1.56
1.50/1.74
2.73/2.42
1.17/1.01
1.43/1.30
1.38/1.28
1.97/1.92
1.92/1.57
3.12/3.16
1.28/1.12
1.49/1.36
1.43/1.33
1.90/1.84
1.85/1.78
2.80/2.81
0.80/0.92
0.43/0.50
0.37/0.43
0.19/0.23
0.18/0.22
0.10/0.12
0.07/0.08
0.77/1.00
1.59/1.82
Rise/Fall
Min.
64
69
37
39
18
20
1.36/1.50
1.76/1.90
1.74/1.83
2.63/2.69
2.53/2.57
4.31/4.29
1.44/1.59
1.76/1.91
1.73/1.83
2.43/2.52
2.36/2.41
3.77/3.78
1.93/1.61
2.33/2.00
2.25/1.99
3.16/2.86
3.11/2.79
4.97/4.59
2.01/1.70
2.33/2.01
2.24/1.99
2.96/2.68
2.91/2.62
4.37/4.53
1.35/1.50
0.72/0.81
0.62/0.70
0.33/0.37
0.31/0.35
0.16/0.18
0.11/0.13
1.22/1.45
2.04/2.27
Typ.
171
183
100
106
50
52
2.21/2.40
2.83/2.82
2.79/2.70
4.18/3.86
4.03/3.76
6.80/6.19
2.24/2.29
2.74/2.75
2.69/2.62
3.79/3.62
3.67/3.46
5.86/5.37
3.06/2.55
3.69/3.13
3.58/3.10
5.01/4.39
4.98/4.13
7.97/6.98
3.09/2.60
3.60/3.06
3.47/3.02
4.59/4.03
4.54/3.96
6.88/6.05
2.23/2.27
1.66/1.68
1.03/1.05
0.75/0.77
0.51/0.53
0.38/0.39
0.16/0.20
1.89/2.21
2.69/3.01
Rise/Fall
Max.
407
432
232
246
116
123
Freescale Semiconductor
mA/ns
mA/ns
mA/ns
Units
V/ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1
1
2
3
4