MCIMX253CVM4 Freescale Semiconductor, MCIMX253CVM4 Datasheet - Page 38

• Manufacturer Part Number: MCIMX253CVM4
• Description: IC MPU I.MX25 IND 400MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX25r

Specifications of MCIMX253CVM4

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: External Program Memory
• Ram Size: 144K x 8
• Voltage - Supply (vcc/vdd): 1.15 V ~ 1.52 V
• Data Converters: A/D 3x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 400-LFBGA
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Compliant

Note:
1. Maximum condition for tpr, tpo, tpi, and tpv: wcs model, 1.1 V, I/O 3.0 V, and 105 °C. Minimum condition for tpr, tpo, and tpv:
2. Minimum condition for tps: wcs model, 1.1 V, I/O 3.0 V, and 105 °C. tps is measured between VIL to VIH for rising edge and
3. Maximum condition for tdit: bcs model, 1.3 V, I/O 3.6 V, and –40 °C.
4. Maximum condition for tpi and trfi: wcs model, 1.1 V, I/O 3.0 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
Table 26
38
Output pad slew rate (max. drive)
Output pad slew rate (high drive)
Output pad slew rate (standard drive)
Output pad dI/dt (max. drive)
Output pad dI/dt (high drive)
Output pad dI/dt (standard drive)
Input pad transition times
Input pad propagation delay, 50%–50%
Input pad propagation delay, 40%–60%
Duty cycle
Clock frequency
Output pad transition times (max. drive)
Output pad transition times (high drive)
Output pad transition times (standard drive)
bcs model, 1.3 V, I/O 3.6 V and –40 °C. Input transition time from core is 1 ns (20%–80%).
between VIH to VIL for falling edge.
I/O 3.6 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
shows AC parameters for SDRAM pbijtov18_33_ddr_clk I/O.
Parameter
Parameter
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 6
Table 26. AC Parameters for SDRAM pbijtov18_33_ddr_clk I/O
Table 25. AC Parameters for SDRAM I/O (continued)
Symbol
Symbol
Fduty
tpr
tpr
tpr
tps
tps
tps
tdit
tdit
tdit
trfi
tpi
tpi
f
Condition
Condition
1.0 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
1.0 pF
Load
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
Load
—
—
—
0.82/0.87
1.56/1.67
1.23/1.31
2.31/2.47
2.44/2.60
4.65/4.99
Rise/Fall
Rise/Fall
1.11/1.20
0.97/0.65
0.76/0.80
0.40/0.43
0.38/0.41
0.20/0.22
0.07/0.08
0.35/1.17
1.18/1.99
Min.
Min.
40
—
89
94
59
62
29
31
1.14/1.13
2.13/2.09
1.71/1.68
3.22/3.12
3.38/3.27
6.38/6.23
1.74/1.75
0.92/0.94
1.16/1.19
0.61/0.63
0.59/0.60
0.31/0.32
0.11/0.12 0.16/0.20
0.63/1.53 1.16/2.04
1.45/2.35 1.97/2.85
Typ.
Typ.
198
209
132
139
50
—
65
69
1.62/1.50
3.015/2.7
2.39/2.22
4.53/4.16
4.73/4.38
9.05/8.23
Rise/Fall
2.42/2.46
1.39/1.30
1.76/1.66
0.93/0.87
0.89/0.82
0.47/0.43
Rise/Fall
Max.
Max.
125
398
421
265
279
132
139
60
7
Freescale Semiconductor
Units
mA/ns
mA/ns
mA/ns
Units
MHz
V/ns
V/ns
V/ns
ns
ns
ns
%
ns
ns
—
Notes
Notes
—
1
1
2
3
4