MCIMX253CVM4 Freescale Semiconductor, MCIMX253CVM4 Datasheet - Page 40

• Manufacturer Part Number: MCIMX253CVM4
• Description: IC MPU I.MX25 IND 400MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX25r

Specifications of MCIMX253CVM4

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: External Program Memory
• Ram Size: 144K x 8
• Voltage - Supply (vcc/vdd): 1.15 V ~ 1.52 V
• Data Converters: A/D 3x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 400-LFBGA
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Compliant

Note:
1. Maximum condition for tpr, tpo, tpi, and tpv: wcs model, 1.1 V, I/O 3.0 V, and 105 °C. Minimum condition for tpr, tpo, and tpv:
2. Minimum condition for tps: wcs model, 1.1 V, I/O 3.0 V, and 105 °C. tps is measured between VIL to VIH for rising edge and
3. Maximum condition for tdit: bcs model, 1.3 V, I/O 3.6 V, and –40 °C.
4. Maximum condition for tpi and trfi: wcs model, 1.1 V, I/O 3.0 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
3.6.3.3
Table 27
40
Output pad dI/dt (max. drive)
Output pad dI/dt (high drive)
Output pad dI/dt (standard drive)
Input pad transition times
Input pad propagation delay, 50%–50%
Input pad propagation delay, 40%–60%
Duty cycle
Clock frequency
Output pad transition times
Output pad propagation delay, 50%–50%
Output pad propagation delay, 40%–60%
Output enable to output valid delay,
50%–50%
Output enable to output valid delay,
40%–60%
Output pad slew rate
bcs model, 1.3 V, I/O 3.6 V and –40 °C. Input transition time from core is 1 ns (20%–80%).
between VIH to VIL for falling edge.
I/O 3.6 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
shows AC parameters for DDR2 I/O.
DDR_TYPE = 10 Max Setting I/O AC Parameters and Requirements
Parameter
Parameter
Table 26. AC Parameters for SDRAM pbijtov18_33_ddr_clk I/O (continued)
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 6
Table 27. AC Parameters for DDR2 I/O
Symbol
Symbol
Fduty
tdit
tdit
tdit
tpo
tpo
tpv
tpv
tps
trfi
tpr
tpi
tpi
f
Condition
Condition
1.0 pF
1.0 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
Load
Load
—
—
0.07/0.08
0.56/0.69
1.38/1.51
Rise/Fall
Rise/Fall
0.53/0.52
1.01/0.98
0.93/1.25
1.26/1.54
1.01/1.17
1.27/1.53
1.30/1.19
1.62/1.54
1.39/1.27
1.64/1.55
0.86/0.98
0.46/054
Min.
Min.
89
95
60
63
29
31
40
—
0.11/0.12 0.16/0.20
0.87/1.08 1.37/1.62
1.68/1.89 2.18/2.42
0.80/0.72
1.49/1.34
1.56/1.70
2.07/2.19
1.60/1.75
2.00/2.14
2.17/1.81
2.56/2.29
2.13/1.86
2.62/2.23
0.72/0.81
1.35/1.5
Typ.
Typ.
202
213
135
142
67
70
50
—
Rise/Fall
1.19/1.04
2.21/1.90
2.52/2.53
3.29/3.24
2.49/2.52
3.11/3.10
3.35/2.84
3.35/2.54
3.38/2.83
4.14/2.38
2.15/2.19
1.12/1.16
Rise/Fall
Max.
Max.
435
456
288
302
144
150
133
60
Freescale Semiconductor
mA/ns
mA/ns
mA/ns
Units
Units
MHz
V/ns
ns
ns
ns
ns
ns
ns
ns
%
Notes
Notes
—
—
3
4
1
1
1
1
1
2