MCIMX253CVM4 Freescale Semiconductor, MCIMX253CVM4 Datasheet - Page 20

• Manufacturer Part Number: MCIMX253CVM4
• Description: IC MPU I.MX25 IND 400MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX25r

Specifications of MCIMX253CVM4

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: External Program Memory
• Ram Size: 144K x 8
• Voltage - Supply (vcc/vdd): 1.15 V ~ 1.52 V
• Data Converters: A/D 3x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 400-LFBGA
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Compliant

3.5
This section includes the DC parameters of the following I/O types:
3.5.1
The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see the
External Signals and Pin Multiplexing chapter of the i.MX25 Reference Manual for details).
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1
2
3
4
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to boards
Junction to case (top)
Junction to package top
Junction-to-ambient thermal resistance determined per JEDC JESD51-3 and JESD51-6. Thermal test board meets JEDEC
specification for this package.
Junction-to-board thermal resistance determined per JEDC JESD51-8. Thermal test board meets JEDEC specification for
this package.
Junction-to-case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is
used for the case temperature. Reported value includes the thermal resistance of the interface layer.
Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, this thermal characterization parameter is written
as Psi-JT.
•
•
•
•
Die Attach: 0.033 mm non-conductive die attach, k = 0.3 W/m K
Mold compound: Generic mold compound; k = 0.9 W/m K
DDR I/O: Mobile DDR (mDDR), double data rate (DDR2), or synchronous dynamic random
access memory (SDRAM)
General purpose I/O (GPIO)
I/O DC Parameters
DDR I/O DC Parameters
The term ‘OVDD’ in this section refers to the associated supply rail of an
input or output. The association is shown in the “Signal Multiplexing”
chapter of the reference manual.
2
1
1
1
1
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
natural convection
natural convection
(@200 ft/min)
(@200 ft/min)
3
Rating
4
Table 16. Thermal Resistance Data
Single layer board (1s)
Four layer board (2s2p)
Single layer board (1s)
Four layer board (2s2p)
Natural convection
NOTE
Condition
—
—
Symbol
R
R
R
R
R
R
eJCtop
Ψ
eJMA
eJMA
eJA
eJA
eJB
JT
Freescale Semiconductor
Value
55
33
46
29
22
13
2
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit