MCIMX253CVM4 Freescale Semiconductor, MCIMX253CVM4 Datasheet - Page 22

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MCIMX253CVM4

Manufacturer Part Number
MCIMX253CVM4
Description
IC MPU I.MX25 IND 400MAPBGA
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Datasheets

Specifications of MCIMX253CVM4

Core Processor
ARM9
Core Size
32-Bit
Speed
400MHz
Connectivity
1-Wire, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
External Program Memory
Ram Size
144K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.52 V
Data Converters
A/D 3x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
400-LFBGA
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCIMX253CVM4
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
3.5.1.2
Table 18
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: bcs model, OVDD = 3.6 V, and –40 °C. Typical condition: typical model, OVDD = 3.3 V, and 25 °C.
3. Typical condition: typical model, OVDD = 3.3 V, and 25 °C. Maximum condition: bcs model, OVDD = 3.6 V, and 105 °C.
3.5.1.3
Table 19
22
High-level output voltage
Low-level output voltage
Low-level DC input voltage
Input current (no pull-up/down)
High-impedance I/O supply current Icc-ovdd
High-impedance core supply
current
High-level output current
Low-level output current
High-level DC input voltage
High-level output voltage
Low-level output voltage
Output min. source current
Output min. sink current
DC input logic high
DC input logic low
Maximum condition: wcs model, OVDD = 3.0 V, and 105 °C.
DC Electrical Characteristics
DC Electrical Characteristics
shows the DC I/O parameters for SDRAM.
shows the I/O parameters for DDR2 (SSTL_18).
DDR_TYPE = 01 SDRAM I/O DC Parameters
DDR_TYPE = 10 Max Setting DDR I/O DC Parameters
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Table 19. DDR2 (SSTL_18) I/O DC Electrical Characteristics
Table 18. SDRAM DC Electrical Characteristics
Symbol
VIH(dc)
VIL(dc)
Symbol
Icc-vddi
Voh
IIoh
Vol
IIol
Voh
VIH
VIL
Vol
Ioh
IIN
Iol
I
I
Conditions
(Ioh = 4, 8, 12, 16mA)
Ioh = Specified Drive
Ioh = Specified Drive
(Ioh = –4, –8, –12,
Test Conditions
VI = OVDD or 0
Test
Standard Drive
Standard Drive
VI = VDD or 0
VI = OVDD
Max. Drive
Max. Drive
High Drive
High Drive
–16mA)
VI = 0
OVDD/2 + 0.125
OVDD – 0.28
–0.3 V
–13.4
Min.
13.4
–0.3 V
–12.0
Min.
–4.0
–8.0
12.0
2.4
4.0
8.0
2.0
Typ.
Typ.
OVDD/2 – 0.125
OVDD + 0.3
Max.
0.28
Max.
1180
1220
Freescale Semiconductor
150
0.4
3.6
0.8
80
Units
Units
mA
mA
mA
mA
V
V
V
V
nA
nA
nA
V
V
V
V
Notes
Notes
2, 3
2, 3
1
2
1
1

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