MCIMX253CVM4 Freescale Semiconductor, MCIMX253CVM4 Datasheet - Page 21

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MCIMX253CVM4

Manufacturer Part Number
MCIMX253CVM4
Description
IC MPU I.MX25 IND 400MAPBGA
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Datasheets

Specifications of MCIMX253CVM4

Core Processor
ARM9
Core Size
32-Bit
Speed
400MHz
Connectivity
1-Wire, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
External Program Memory
Ram Size
144K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.52 V
Data Converters
A/D 3x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
400-LFBGA
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCIMX253CVM4
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
3.5.1.1
Table 17
1.8V (± 5%) applications.
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
3. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C.
Freescale Semiconductor
High-level output voltage
Low-level output voltage
High-level DC CMOS input voltage
Low-level DC CMOS input voltage
Differential receiver VTH+
Differential receiver VTH-
Input current (no pull-up/down)
High-impedance I/O supply current
High-impedance core supply current
High-level output current
Low-level output current
wcs model, 1.65 V, and 105 °C.
DC Electrical Characteristics
shows the I/O parameters for mobile DDR. These settings are suitable for mDDR and DDR2
DDR_TYPE = 00 Standard Setting DDR I/O DC Parameters
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Table 17. Mobile DDR I/O DC Electrical Characteristics
Icc-ovdd
Symbol
Icc-vddi
VTH+
VTH-
Voh
VIH
VIL
Vol
Ioh
IIN
Iol
I
I
Vol = 0.2 × OVDDV
Test Conditions
VI = OVDD or 0
I
I
Standard Drive
Standard Drive
OH
VI = VDD or 0
OL
I
Voh = 0.8 ×
VI = OVDD
Max. Drive
Max. Drive
OH
High Drive
High Drive
I
OL
OVDDV
= Specified
= Specified
VI = 0
Drive
Drive
= –1mA
= 1mA
OVDD – 0.08
0.7 × OVDD
0.8 × OVDD
–10.8
–100
Min.
–3.6
–7.2
10.8
–0.3
3.6
7.2
OVDD
Typ.
0
0.2 × OVDD
0.3 × OVDD
OVDD+0.3
Max.
1220
0.08
990
100
110
60
Units
mA
mA
mV
mV
nA
nA
nA
V
V
V
V
Notes
2, 3
2, 3
1
21

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