S29GL01GP12TFI010 Spansion Inc., S29GL01GP12TFI010 Datasheet - Page 3

• Manufacturer Part Number: S29GL01GP12TFI010
• Description: Flash 3V 1 Gb Mirrorbit highest address120ns
• Manufacturer: Spansion Inc.

Specifications of S29GL01GP12TFI010

• Memory Type: NOR
• Memory Size: 1 Gbit
• Access Time: 110 ns
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Memory Configuration: 128K X 16
• Ic Interface Type: Parallel
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

General Description
Distinctive Characteristics
This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document
may be revised by subsequent versions or modifications due to changes in technical specifications.
The Spansion S29GL01G/512/256/128P are Mirrorbit
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer
that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time
than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher
density, better performance and lower power consumption.
S29GL-P MirrorBit
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
Data Sheet (Preliminary)
Single 3V read/program/erase (2.7-3.6 V)
Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs
90 nm MirrorBit process technology
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming
time for multiple-word updates
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
– Can be programmed and locked at the factory or by the customer
Uniform 64Kword/128KByte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
100,000 erase cycles per sector typical
20-year data retention typical
are determined by voltage on V
through an 8-word/16-byte random Electronic Serial Number
Publication Number S29GL-P_00
IO
input. V
IO
range is 1.65 to V
®
Flash Family
Revision A
®
Flash products fabricated on 90 nm process technology. These devices
CC
Amendment 8
Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
Suspend and Resume commands for Program and Erase
operations
Write operation status bits indicate program and erase
operation completion
Unlock Bypass Program command to reduce programming
time
Support for CFI (Common Flash Interface)
Persistent and Password methods of Advanced Sector
Protection
WP#/ACC input
– Accelerates programming time (when V
– Protects first or last sector regardless of sector protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase
cycle completion
throughput during system production
Issue Date November 28, 2007
HH
is applied) for greater