S29GL01GP12TFI010 Spansion Inc., S29GL01GP12TFI010 Datasheet - Page 61

• Manufacturer Part Number: S29GL01GP12TFI010
• Description: Flash 3V 1 Gb Mirrorbit highest address120ns
• Manufacturer: Spansion Inc.

Specifications of S29GL01GP12TFI010

• Memory Type: NOR
• Memory Size: 1 Gbit
• Access Time: 110 ns
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Memory Configuration: 128K X 16
• Ic Interface Type: Parallel
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see
2. These waveforms are for the word mode
Notes
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
2. t
3. CE# does not need to go high between status bit reads
November 28, 2007 S29GL-P_00_A8
Addresses
OE
Addresses
DQ6–DQ0
RY/BY#
for data polling is 45 ns when V
RY/BY#
WE#
DQ7
OE#
CE#
WE#
Data
CE#
OE#
V
CC
t
VCS
t
t
BUSY
CH
t
OEH
t
Erase Command Sequence (last two cycles)
CS
2AAh
Figure 11.12 Data# Polling Timings (During Embedded Algorithms)
t
IO
D a t a
WC
t
= 1.65 to 2.7 V and is 35 ns when V
ACC
t
CE
t
t
VA
t
WP
t
RC
OE
DS
Figure 11.11 Chip/Sector Erase Operation Timings
55h
S h e e t
t
t
DH
CH
Complement
Status Data
555h for chip erase
t
S29GL-P MirrorBit
t
WPH
OH
t
DF
t
( P r e l i m i n a r y )
AS
SA
10 for Chip Erase
IO
= 2.7 to 3.6 V
t
AH
®
VA
30h
Complement
Flash Family
Status Data
Write Operation Status on page
t
BUSY
True
True
t
WHWH2
Read Status Data
VA
36.)
Progress
VA
In
Valid Data
Valid Data
VA
Complete
t
RB
High Z
High Z
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