S29GL01GP12TFI010 Spansion Inc., S29GL01GP12TFI010 Datasheet - Page 64

• Manufacturer Part Number: S29GL01GP12TFI010
• Description: Flash 3V 1 Gb Mirrorbit highest address120ns
• Manufacturer: Spansion Inc.

Specifications of S29GL01GP12TFI010

• Memory Type: NOR
• Memory Size: 1 Gbit
• Access Time: 110 ns
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Memory Configuration: 128K X 16
• Ic Interface Type: Parallel
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
1.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
64
Figure 11.15
Addresses
RESET#
RY/BY#
indicates last two bus cycles of a program or erase operation.
WE#
Data
OE#
CE#
t
RH
555 for program
2AA for erase
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
t
AS
t
S29GL-P MirrorBit
DH
OUT
D a t a
is the data written to the device.
t
AH
PD for program
30 for sector erase
10 for chip erase
S h e e t
t
BUSY
®
t
Flash Family
WHWH1 or 2
( P r e l i m i n a r y )
Data# Polling
DQ7#
PA
S29GL-P_00_A8 November 28, 2007
D
OUT