FGA25N120FTD Fairchild Semiconductor, FGA25N120FTD Datasheet - Page 4

• Manufacturer Part Number: FGA25N120FTD
• Description: IGBT TRENCH 1200V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120FTD

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA25N120FTD Rev. A1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
180
150
120
120
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
90
60
30
90
60
30
0
0
25
0
0
T
Common Emitter
V
T
T
Common Emitter
V
C
C
C
GE
Collector-EmitterCase Temperature, T
GE
Temperature at Variant Current Level
= 25
Characteristics
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
2
1
C
50
17V
20V
4
2
15V
75
I
8V
C
6
3
= 10A
50A
25A
12V
10V
9V
7V
100
CE
CE
V
8
[V]
4
[V]
GE
C
= 6V
[
o
C
]
125
10
5
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
180
150
120
120
90
60
30
20
16
12
90
60
30
8
4
0
0
0
0
0
0
T
Common Emitter
V
T
T
C
C
C
CE
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
C
o
4
C
2
3
Gate-Emitter Voltage, V
C
I
Gate-Emitter Voltage,V
C
= 10A
25A
17V
20V
8
4
6
50A
12
6
9
Common Emitter
T
8V
C
12V
15V
10V
GE
9V
= 25
GE
7V
CE
[V]
[V]
o
16
12
8
[V]
C
V
GE
GE
= 6V
www.fairchildsemi.com
20
10
15