FGA25N120FTD Fairchild Semiconductor, FGA25N120FTD Datasheet - Page 7

• Manufacturer Part Number: FGA25N120FTD
• Description: IGBT TRENCH 1200V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120FTD

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA25N120FTD Rev. A1
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 21. Reverse Recovery Time
1200
1000
800
600
400
60
50
40
30
20
10
10
15
15
Forward Current, I
Forward Current, I
di/dt = 100A/
200A/
µ
1E-3
20
20
0.01
s
0.1
1
1E-5
di/dt = 100A/
Figure 22. Transient Thermal Impedance of IGBT
µ
200A/
s
single pulse
0.2
0.05
0.02
0.01
0.5
0.1
F
F
[A]
[A]
µ
s
25
25
µ
1E-4
s
30
30
Rectangular Pulse Duration [sec]
1E-3
7
Figure 20. Stored Charge
0.01
30
20
10
0
10
0.1
P
15
Forward Current, I
Duty Factor, D = t1/t2
Peak T
DM
200A/
j
t
= Pdm x Zthjc + T
1
t
2
1
µ
20
s
di/dt = 100A/
F
[A]
C
25
10
µ
s
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