FGA25N120FTD Fairchild Semiconductor, FGA25N120FTD Datasheet - Page 5

• Manufacturer Part Number: FGA25N120FTD
• Description: IGBT TRENCH 1200V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120FTD

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA25N120FTD Rev. A1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
500
100
20
16
12
15
12
10
8
4
0
9
6
3
0
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
t
r
t
d(on)
o
20
4
C
Gate-Emitter Voltage, V
I
50
C
Gate Resistance, R
V
= 10A
Gate Charge, Q
CC
= 200V
40
8
100
25A
Common Emitter
V
I
T
T
C
CC
C
C
12
60
= 25A
= 25
= 125
g
= 600V, V
50A
Common Emitter
T
[nC]
400V
G
C
o
GE
[ Ω ]
= 125
600V
C
o
150
C
[V]
GE
16
80
o
GE
C
= 15V
200
100
20
5
Figure 8. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
Figure 10. SOA Characteristics
1000
5500
0.01
Figure 12. Turn-off Characteristics vs.
100
100
200
0.1
50
10
0
1
1
0
1
Common Emitter
V
I
T
T
*Notes:
C
CC
C
C
= 25A
1. T
2. T
3. Single Pulse
= 25
= 125
Collector-Emitter Voltage, V
= 600V, V
Collector-Emitter Voltage, V
C
J
o
Gate Resistance
= 150
20
= 25
C
o
C
Gate Resistance, R
C
o
C
10
C
C
o
GE
ies
res
C
oes
= 15V
40
100
60
Common Emitter
V
T
C
GE
G
10
= 25
100
10 ms
[ Ω ]
1ms
= 0V, f = 1MHz
CE
t
d(off)
DC
µ
t
o
f
[V]
C
s
CE
80
10
[V]
1000
µ
s
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30
100
3000