HGTG11N120CND Fairchild Semiconductor, HGTG11N120CND Datasheet
HGTG11N120CND
Specifications of HGTG11N120CND
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HGTG11N120CND Summary of contents
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... Data Sheet 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND on- P unch T hrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... SC MIN TYP 1200 - 125 C - 300 150 2 150 C - 2.9 C 6.0 6 15V 1200V - 10 15V - 100 20V - 130 180 - 190 - 0.95 - 1.3 UNITS µ s µ s MAX UNITS - V µ A 250 µ 3.5 mA 2 ± 250 120 nC 150 240 ns 220 ns 1.3 mJ 1.6 mJ HGTG11N120CND Rev. B ...
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... FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA MIN TYP o = 150 210 - 360 - 1.9 - 2 150 10Ω 15V 400µ 200 400 600 800 V , COLLECTOR TO EMITTER VOLTAGE (V) CE MAX UNITS 280 ns 400 ns 2.5 mJ 2 0.42 C/W o 1.25 C/W 1000 1200 1400 HGTG11N120CND Rev. B ...
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... DUTY CYCLE < 0.5%, V PULSE DURATION = 250µ COLLECTOR TO EMITTER VOLTAGE ( 10Ω 2mH 960V G CE 3.0 2 150 12V OR 15V J GE 2.0 1.5 1 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 250 200 I SC 150 100 15V HGTG11N120CND Rev. B ...
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... COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT R = 10Ω 2mH 960V 150 12V OR 15V 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA 54.5Ω G(REF 800V 1200V 400V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS = 12V o = 150 15V 120 100 HGTG11N120CND Rev. B ...
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... Unless Otherwise Specified (Continued FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE - RECTANGULAR PULSE DURATION ( FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT o DUTY CYCLE < 0.5 110 C C PULSE DURATION = 250µ 15V COLLECTOR TO EMITTER VOLTAGE ( DUTY FACTOR PEAK θJC θ 200A/µ FORWARD CURRENT ( 10V HGTG11N120CND Rev. B ...
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... A 50% duty factor was used (Figure 3) and the D ) are approximated )/ and E are defined in the switching waveforms shown OFF is the integral of the instantaneous power during turn-on and E is the integral of the CE CE OFF during turn-off. All tail CE CE OFF = 0 d(ON)I or MAX1 + t ). d(ON)I is d(OFF The )/R . θ i.e., the HGTG11N120CND Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...