HGTG11N120CND Fairchild Semiconductor, HGTG11N120CND Datasheet - Page 6

• Manufacturer Part Number: HGTG11N120CND
• Description: IGBT NPT N-CH 1200V 43A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG11N120CND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 11A
• Current - Collector (ic) (max): 43A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 43 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 43 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 43A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
4
3
2
1
0
100
10
0
C
1
RES
FREQUENCY = 1MHz
1
10
10
10
-1
-2
0
10
150
-5
V
VOLTAGE
VOLTAGE DROP
0.05
0.5
0.2
0.1
0.02
o
0.01
CE
C
5
, COLLECTOR TO EMITTER VOLTAGE (V)
2
C
IES
-55
SINGLE PULSE
V
o
F
C
, FORWARD VOLTAGE (V)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
25
3
C
o
C
OES
10
-4
15
4
Unless Otherwise Specified (Continued)
20
5
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
25
6
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
15
12
70
60
50
40
30
20
10
9
6
3
0
0
1
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs
10
T
C
-2
= 25
DUTY FACTOR, D = t
P
PEAK T
D
V
t
rr
o
CE
t
t
C, dI
a
b
, COLLECTOR TO EMITTER VOLTAGE (V)
J
2
1
= (P
EC
I
F
/ dt = 200A/µs
D
, FORWARD CURRENT (A)
X Z
C
θJC
t
= 110
1
1
V
/ t
X R
GE
10
t
2
2
-1
2
o
θJC
= 15V
C
5
) + T
C
V
GE
HGTG11N120CND Rev. B
= 10V
3
10
10
0
20
4