HGTG11N120CND Fairchild Semiconductor, HGTG11N120CND Datasheet - Page 5

• Manufacturer Part Number: HGTG11N120CND
• Description: IGBT NPT N-CH 1200V 43A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG11N120CND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 11A
• Current - Collector (ic) (max): 43A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 43 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 43 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 43A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 43A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
100
40
35
30
25
20
15
500
450
400
350
300
250
200
150
100
80
60
40
20
0
0
7
0
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
G
T
FIGURE 13. TRANSFER CHARACTERISTIC
J
= 10Ω, L = 2mH, V
= 25
T
C
V
8
EMITTER CURRENT
EMITTER CURRENT
I
= 150
GE
CE
I
o
CE
C, T
, COLLECTOR TO EMITTER CURRENT (A)
= 12V, V
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
o
J
5
C
9
5
= 150
, GATE TO EMITTER VOLTAGE (V)
GE
CE
T
o
10
C
C, V
= 15V, T
V
= 960V
= 25
CE
GE
T
GE
J
T
= 20V
= 12V, V
o
= 25
C
= 12V
10
C
R
11
J
10
= -55
G
= 25
o
= 10Ω, L = 2mH, V
C, T
o
GE
o
C
C
J
12
= 150
= 15V, T
Unless Otherwise Specified (Continued)
o
15
13
15
C, V
J
= 150
GE
CE
= 15V
14
o
= 960V
C
20
20
15
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
600
200
20
15
10
700
500
400
300
100
50
40
30
20
10
5
0
0
0
0
0
I
G(REF)
R
G
FIGURE 14. GATE CHARGE WAVEFORMS
= 10Ω, L = 2mH, V
EMITTER CURRENT
CURRENT
= 1mA, R
20
T
I
I
CE
CE
V
J
CE
= 25
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
= 1200V
T
5
G
5
V
J
o
C, V
CE
= 10Ω, L = 2mH, V
L
= 25
Q
40
= 54.5Ω, T
G
= 400V
GE
o
, GATE CHARGE (nC)
C, T
T
CE
T
= 12V OR 15V
J
J
= 150
V
= 960V
J
= 25
CE
= 150
C
60
10
10
= 25
o
= 800V
o
C OR T
C, V
o
C, V
CE
o
C
GE
= 960V
GE
J
= 12V OR 15V
80
= 150
= 12V
HGTG11N120CND Rev. B
o
15
15
C, V
100
GE
= 15V
120
20
20