ISL9V2040D3ST Fairchild Semiconductor, ISL9V2040D3ST Datasheet - Page 3

• Manufacturer Part Number: ISL9V2040D3ST
• Description: IGBT N-CH IGNTN 400V 10A TO252AA
• Manufacturer: Fairchild Semiconductor
• Series: EcoSPARK™r

Specifications of ISL9V2040D3ST

• Voltage - Collector Emitter Breakdown (max): 430V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 4V, 6A
• Current - Collector (ic) (max): 10A
• Power - Max: 130W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Electronic Ignition Drivers
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: ISL9V2040D3STTR; ISL9V2040D3ST_NL; ISL9V2040D3ST_NLTR; ISL9V2040D3ST_NLTR

©2004 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 3. Collector to Emitter On-State Voltage vs
Figure 5. Collector to Emitter On-State Voltage vs
Figure 1. Self Clamped Inductive Switching
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
20
15
10
20
18
16
14
12
10
5
0
8
6
4
2
0
-75
0
0
V
V
V
V
V
I
CE
SCIS Curves valid for V
T
GE
GE
GE
GE
GE
20
J
Current vs Time in Clamp
= 6A
= 150°C
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
V
Junction Temperature
CE
V
-25
40
GE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
Collector Current
J
1.0
= 8.0V
, JUNCTION TEMPERATURE (°C)
60
t
CLP
V
, TIME IN CLAMP (µS)
GE
80
25
= 4.0V
clamp
R
100
2.0
V
G
T
GE
V
J
= 1K , V
GE
Voltages of <430V
= 25°C
= 3.7V
120
75
= 5.0V
GE
140
= 5V,V
V
3.0
GE
160
125
T
= 4.5V
J
dd
= - 40°C
180
= 14V
200
175
4.0
Figure 4. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
Figure 2. Self Clamped Inductive Switching
2.4
2.2
2.0
1.8
1.6
1.4
20
15
10
20
18
16
14
12
10
5
0
8
6
4
2
0
-75
0
0
SCIS Curves valid for V
V
V
V
V
V
I
CE
GE
GE
GE
GE
GE
vs Junction Temperature
= 10A
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
Current vs Inductance
CE
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
vs Collector Current
-25
T
, COLLECTOR TO EMITTER VOLTAGE (V)
2
J
T
1.0
J
= 150°C
, JUNCTION TEMPERATURE (°C)
T
L, INDUCTANCE (mHy)
J
= 25°C
V
25
GE
4
V
GE
= 8.0V
R
clamp
G
2.0
= 4.0V
= 1K , V
V
Voltages of <430V
GE
75
6
V
= 3.7V
GE
GE
= 5.0V
= 5V,V
3.0
125
V
8
T
GE
dd
J
= 25°C
= 14V
= 4.5V
175
4.0
10