ISL9V2040D3ST Fairchild Semiconductor, ISL9V2040D3ST Datasheet - Page 4

• Manufacturer Part Number: ISL9V2040D3ST
• Description: IGBT N-CH IGNTN 400V 10A TO252AA
• Manufacturer: Fairchild Semiconductor
• Series: EcoSPARK™r

Specifications of ISL9V2040D3ST

• Voltage - Collector Emitter Breakdown (max): 430V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 4V, 6A
• Current - Collector (ic) (max): 10A
• Power - Max: 130W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Electronic Ignition Drivers
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: ISL9V2040D3STTR; ISL9V2040D3ST_NL; ISL9V2040D3ST_NLTR; ISL9V2040D3ST_NLTR

©2004 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 7. Collector to Emitter On-State Voltage vs
10000
1000
15.0
12.5
10.0
100
Figure 11. Leakage Current vs Junction
0.1
7.5
5.0
2.5
Figure 9. DC Collector Current vs Case
10
20
15
10
1
0
5
0
25
0
-50
V
V
V
V
V
GE
GE
GE
GE
GE
-25
= 8.0V
= 5.0V
= 4.5V
= 4.0V
V
= 3.7V
CE
50
, COLLECTOR TO EMITTER VOLTAGE (V)
T
Collector Current
0
1.0
J
T
, JUNCTION TEMPERATURE (°C)
C
Temperature
Temperature
, CASE TEMPERATURE (°C)
75
25
V
V
CES
ECS
V
50
CES
100
= 300V
2.0
= 24V
= 250V
75
125
100
3.0
125
V
(Continued)
GE
150
T
J
= 4.0V
= 175°C
150
175
175
4.0
Figure 10. Threshold Voltage vs Junction
30
25
20
15
10
5
0
Figure 12. Switching Time vs Junction
2.4
2.2
2.0
1.8
1.6
1.4
1.2
10
8
6
4
2
1.0
25
Figure 8. Transfer Characteristics
-50
DUTY CYCLE < 0.5%, V
I
PULSE DURATION = 250µs
CE
Inductive t
= 6.5A, V
-25
50
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
V
T
J
GE
2.0
= 25°C
T
T
T
, GATE TO EMITTER VOLTAGE (V)
0
J
J
OFF
Resistive t
J
, JUNCTION TEMPERATURE (°C)
GE
= 150°C
Temperature
Temperature
JUNCTION TEMPERATURE (°C)
= 5V, R
75
25
CE
G
OFF
50
= 1K
= 5V
3.0
100
75
T
J
= -40°C
125
100
4.0
Resistive t
125
V
I
CE
CE
150
= 1mA
= V
150
GE
ON
5.0
175
175