ISL9V2040D3ST Fairchild Semiconductor, ISL9V2040D3ST Datasheet - Page 5

• Manufacturer Part Number: ISL9V2040D3ST
• Description: IGBT N-CH IGNTN 400V 10A TO252AA
• Manufacturer: Fairchild Semiconductor
• Series: EcoSPARK™r

Specifications of ISL9V2040D3ST

• Voltage - Collector Emitter Breakdown (max): 430V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 4V, 6A
• Current - Collector (ic) (max): 10A
• Power - Max: 130W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Electronic Ignition Drivers
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: ISL9V2040D3STTR; ISL9V2040D3ST_NL; ISL9V2040D3ST_NLTR; ISL9V2040D3ST_NLTR

©2004 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 13. Capacitance vs Collector to Emitter
1200
1000
800
600
400
200
0
415
410
405
400
395
390
385
380
375
370
10
10
10
0
-1
-2
0
10
10
-5
0.2
0.05
0.1
0.5
V
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
5
C
RES
Voltage
SINGLE PULSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
10
0.02
0.01
C
C
OES
10
IES
-4
15
FREQUENCY = 1 MHz
(Continued)
20
T
1
R
, RECTANGULAR PULSE DURATION (s)
G
, SERIES GATE RESISTANCE (
T
100
10
J
= 175°C
-3
25
T
J
= 25°C
8
7
6
5
4
3
2
1
0
0
10
V
-2
I
CE
G(REF)
Figure 14. Gate Charge
)
= 12V
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
5
= 1mA, R
DUTY FACTOR, D = t
PEAK T
V
CE
Q
= 6V
L
G
10
= 1.25
, GATE CHARGE (nC)
J
P
= (P
D
10
1000
D
-1
X Z
T
J
15
= 25°C
t
1
JC
t
2
1
T
/ t
X R
J
I
CER
= - 40°C
2
JC
2000
20
= 10mA
) + T
C
3000
10
25
0