HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet
HGTG18N120BN
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HGTG18N120BN Summary of contents
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... NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor ...
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... SC MIN TYP = 0V 1200 = 125 C - 300 150 2. 150 6.0 7 3Ω 15V, 100 GE = 1200V - 10 15V - 165 20V - 220 170 - 90 - 1.9 - 1.8 UNITS µs µs MAX UNITS - - µA - 250 µ 2 ±250 - 200 nC 250 200 ns 140 ns 2.4 mJ 2.2 mJ HGTG18N120BND Rev. C ...
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... T = 150 3Ω 15V 200µ 100 200 400 600 800 V , COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA MAX UNITS 240 ns 200 ns 4.9 mJ 3 0.32 C 0.75 C/W 1000 1200 1400 HGTG18N120BND Rev.C ...
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... FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 4 3Ω 1mH 960V G CE 4.0 3 150 12V OR 15V J GE 3.0 2.5 2 1.5 1.0 0 COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 300 o C 250 I SC 200 150 t SC 100 150 15V 12V OR 15V HGTG18N120BND Rev.C ...
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... T = 150 150 125 100 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 2mA 33.3Ω G(REF 800V V = 1200V 400V 100 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS = 12V 150 15V 12V OR 15V 150 200 HGTG18N120BND Rev.C ...
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... DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( DUTY CYCLE < 0.5 110 C PULSE DURATION = 250µ 15V OR 12V COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE θJC θ /dt = 200A/µ FORWARD CURRENT (A) F FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT 10V HGTG18N120BND Rev.C ...
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... A 50% duty factor was used (Figure 3) and the D ) are approximated )/ and E are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and i.e., the collector current equals zero (I 10 d(ON d(ON d(OFF The OFF )/R . θ the OFF during 0). CE HGTG18N120BND Rev.C ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...