HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet
HGTG18N120BN
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HGTG18N120BN Summary of contents
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... Data Sheet 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN on- P unch T hrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... MIN TYP 1200 - 125 C - 250 150 2. 150 C - 3.8 C 6.0 7 15V, 100 - GE = 1200V - 10 15V - 165 20V - 220 170 - 90 - 0.8 - 1.9 - 1.8 UNITS µ s µ s MAX UNITS - µ A 250 µ 2 ± 250 200 nC 250 200 ns 140 ns 1.0 mJ 2.4 mJ 2.2 mJ HGTG18N120BN Rev. B ...
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... V , COLLECTOR TO EMITTER VOLTAGE ( 960V 3Ω 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS 240 ns 200 ns 1.1 mJ 4 0.32 C/W is ON2 1000 1200 1400 300 250 200 150 100 50 16 HGTG18N120BN Rev. B ...
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... T = 150 12V OR 15V J GE 3.0 2.5 2 12V OR 15V J GE 1.0 0 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 120 R = 3Ω 1mH 960V G CE 100 150 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 150 15V 12V o = 150 15V HGTG18N120BN Rev. B ...
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... OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 2mA 33.3Ω G(REF 1200V V = 800V 400V 100 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 30 o DUTY CYCLE < 0.5 110 C C PULSE DURATION = 250µ 15V OR 12V COLLECTOR TO EMITTER VOLTAGE ( 150 200 V = 10V HGTG18N120BN Rev. B ...
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... Test Circuit and Waveforms L = 1mH R = 3Ω G FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued) DUTY FACTOR PEAK RECTANGULAR PULSE DURATION (s) 1 HGTG18N120BND 960V θJC θ 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS HGTG18N120BN Rev ...
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... A 50% duty factor was used (Figure 3) and D ) are approximated )/ are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in ; i.e., the collector current equals OFF = 0). HGTG18N120BN Rev d(OFF)I ). The ON2 - T )/R . θJC C ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...