HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 2

• Manufacturer Part Number: HGTG18N120BN
• Description: IGBT NPT N-CH 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
1. Pulse width limited by maximum junction temperature.
2. I
3. V
At T
At T
CE
CE(PK)
C
C
= 25
= 110
= 25A, L = 400 µ H, T
o
= 960V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
J
C
= 25
= 25
o
> 25
C, R
o
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C.
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 3 Ω.
= 25
C
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
BV
t
CE(SAT)
SSOA
d(OFF)I
V
E
E
GE(TH)
d(ON)I
E
I
I
G(ON)
GES
CES
GEP
ON1
ON2
OFF
t
t
CES
ECS
rI
fI
I
I
V
I
V
I
V
T
L = 200µH, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 18)
C
C
C
C
C
C
CE
J
GE
CE
GE
GE
CE
CE
G
= 250 µ A, V
= 10mA, V
= 18A,
= 150 µ A, V
= 18A, V
= 18A,
= 150
= 3 Ω
= 18A
= 1200V
= 600V
= 960V
= 15V
= 15V
= ± 20V
o
TEST CONDITIONS
C, R
CE
GE
CE(PK)
GE
CE
G
= 600V
= 3 Ω, V
= 0V
= V
= 0V
J
GE
= 1200V
T
T
T
T
T
V
V
J
= 25
, T
C
C
C
C
C
GE
GE
GE
C110
GEM
= 25
= 125
= 150
= 25
= 150
GES
CES
STG
C25
CM
SC
SC
= 15V
= 20V
o
AV
= 15V,
C
D
L
o
o
C
C
o
o
o
C
C
C
HGTG18N120BN
100A at 1200V
-55 to 150
1200
MIN
100
6.0
15
1200
3.12
160
± 20
± 30
390
125
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
54
26
15
8
TYP
2.45
10.5
250
165
220
170
3.8
7.0
0.8
1.9
1.8
23
17
90
-
-
-
-
-
-
MAX
± 250
HGTG18N120BN Rev. B
250
200
250
200
140
2.7
4.2
1.0
2.4
2.2
28
22
3
-
-
-
-
-
-
UNITS
W/
mJ
o
o
W
µ s
µ s
V
A
A
A
V
V
C
C
UNITS
o
C
mA
mJ
mJ
mJ
µ A
µ A
nA
nC
nC
ns
ns
ns
ns
V
V
V
V
V
A
V