HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 3

• Manufacturer Part Number: HGTG18N120BN
• Description: IGBT NPT N-CH 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Electrical Specifications
NOTES:
Typical Performance Curves
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
4. Turn-Off Energy Loss (E
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
100
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
50
10
60
50
40
30
20
10
1
0
25
5
P
f
f
R
T
MAX1
MAX2
C
ØJC
J
= CONDUCTION DISSIPATION
= 150
(DUTY FACTOR = 50%)
PARAMETER
= 0.32
TEMPERATURE
EMITTER CURRENT
= 0.05 / (t
= (P
I
CE
o
50
C, R
, COLLECTOR TO EMITTER CURRENT (A)
D
o
- P
C/W, SEE NOTES
T
G
C
C
d(OFF)I
= 3Ω, L = 1mH, V
) / (E
, CASE TEMPERATURE (
10
T
OFF
C
ON2
75
= 75
+ t
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
d(ON)I
+ E
o
T
C, V
OFF
C
)
= 25
GE
)
CE
100
110
110
= 15V, IDEAL DIODE
T
75
75
= 960V
o
C
C, Unless Otherwise Specified (Continued)
o
o
o
o
20
C
C
C
C
Unless Otherwise Specified
o
SYMBOL
C)
t
V
t
d(OFF)I
15V
12V
15V
12V
E
E
d(ON)I
E
R
GE
ON1
ON2
OFF
125
t
t
θJC
rI
fI
V
GE
CE
30
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 18)
CE
150
GE
CE
G
40
= 3 Ω
= 18A
= 960V
= 15V
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
120
100
30
25
20
15
10
80
60
40
20
J
5
0
12
= 150
0
T
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
J
= 150
o
V
C
200
CE
V
CE
o
V
J
C, R
= 960V, R
GE
as the IGBT. The diode type is specified in Fig. 18.
, COLLECTOR TO EMITTER VOLTAGE (V)
13
ON1
, GATE TO EMITTER VOLTAGE (V)
G
400
= 3Ω, V
is the turn-on loss of the IGBT only. E
G
= 3Ω, T
MIN
GE
-
-
-
-
-
-
-
-
600
14
= 15V, L = 200µH
J
= 125
TYP
0.85
800
205
140
3.7
2.6
21
17
-
o
t
I
C
SC
SC
15
1000
MAX
0.32
HGTG18N120BN Rev. B
240
200
1.1
4.9
3.1
26
22
1200
16
UNITS
o
300
250
200
150
100
50
C/W
mJ
mJ
mJ
ns
ns
ns
ns
ON2
1400
is