HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 5

• Manufacturer Part Number: HGTG18N120BN
• Description: IGBT NPT N-CH 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
200
150
100
6
5
4
3
2
1
0
350
300
250
200
150
100
50
0
0
6
5
FREQUENCY = 1MHz
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
FIGURE 13. TRANSFER CHARACTERISTIC
C
RES
7
V
EMITTER CURRENT
V
VOLTAGE
GE
10
I
CE
CE
5
, COLLECTOR TO EMITTER VOLTAGE (V)
= 12V, V
, COLLECTOR TO EMITTER CURRENT (A)
V
T
GE
8
C
C
IES
= 150
, GATE TO EMITTER VOLTAGE (V)
15
GE
9
o
10
= 15V, T
C
V
T
GE
CE
C
20
C
10
= 25
OES
= 12V, V
= 20V
J
R
o
G
= 25
C
11
= 3Ω, L = 1mH, V
25
15
GE
o
T
C
C
= 15V, T
= -55
12
Unless Otherwise Specified (Continued)
30
o
C
J
13
20
= 150
CE
35
= 960V
o
14
C
25
40
15
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
20
15
10
225
175
125
250
200
150
100
5
0
75
50
25
30
25
20
15
10
0
5
0
5
I
G(REF)
0
R
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs
FIGURE 14. GATE CHARGE WAVEFORMS
G
T
J
= 3Ω, L = 1mH, V
= 25
CURRENT
10
I
= 2mA, R
CE
V
V
CE
, COLLECTOR TO EMITTER CURRENT (A)
o
CE
C, V
1
50
, COLLECTOR TO EMITTER VOLTAGE (V)
= 1200V
V
GE
15
L
CE
= 33.3Ω, T
Q
T
= 12V OR 15V
= 400V
G
J
, GATE CHARGE (nC)
CE
= 150
20
V
2
= 960V
C
V
GE
o
CE
= 110
C
100
C, V
= 15V OR 12V
= 25
= 800V
GE
o
25
o
C
C
= 12V OR 15V
3
30
HGTG18N120BN Rev. B
150
V
GE
4
= 10V
35
40
200
5