HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 8

• Manufacturer Part Number: HGTG18N120BN
• Description: IGBT NPT N-CH 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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